unisonic technologies co., ltd ut3416 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r502-325.c n-channel enhancement mode field effect transistor ? description the utc ut3416 is advanced n-channel enhancement mosfet which can provide the des igner with the best combination of excellent r ds (on) , low gate charge and low gate voltages as low as 1.8v.when it is used as a load sw itch or in pwm application, the utc ut3416 can be considered as an ideal. ? features * v ds =20 v * i d =6.5 a * r ds(on) < 22 m ? @ v gs = 4.5 v * r ds(on) < 26 m ? @ v gs = 2.5 v * r ds(on) < 34 m ? @ v gs = 1.8 v ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ut3416l-ae3-r UT3416G-AE3-R sot-23 s g d tape reel ? marking 34s l: lead free g: halogen free
ut3416 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-325.c ? absolute maximum ratings (ta = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous drain current (ta=25c) i d 6.5 a pulsed drain current (note 2) i dm 30 a power dissipation (ta=25c)(note 3) p d 1.4 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by t j(max) 3. surface mounted on 1in 2 copper pad of fr4 board ? thermal data parameter symbol min typ max unit junction to ambient (note) ja 85 125 c/w note: surface mounted on 1 in 2 copper pad of fr4 board ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 20 v drain-source leakage current i dss v gs =0v, v ds =16v 1 a v gs =4.5v, v ds =0v 1 a gate-source leakage current i gss v gs = 8v, v ds =0v 10 a on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 0.4 0.6 1 v on state drain current i d(on) v gs =4.5v, v ds =5v 30 a v gs =4.5v, i d =6.5a 18 22 m ? v gs =2.5v, i d =5.5a 21 26 m ? static drain-source on-resistance r ds(on) v gs =1.8v, i d =5a 26 34 m ? dynamic parameters input capacitance c iss 1160 pf output capacitance c oss 187 pf reverse transfer capacitance c rss v gs =0v, v ds =10v, f =1mhz 146 pf gate resistance r g v gs =0v , v ds =0v, f =1mhz 1.5 ? switching parameters total gate charge q g 16 nc gate source charge q gs 0.8 nc gate drain charge q gd v ds =10v,v gs =4.5v,i d =6.5a 3.8 nc turn-on delay time t d(on) 6.2 ns turn-on rise time t r 12.7 ns turn-off delay time t d(off) 51.7 ns turn-off fall-time t f v gs =5v, v ds =10v r l =1.5 ? , r gen =3 ? 16 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =1a, v gs =0v 0.76 1 v maximum body-diode continuous current i s 2.5 a body diode reverse recovery time t rr 17.7 ns body diode reverse recovery charge q rr i f =6.5a, di/dt=100a/ s 6.7 nc note: surface mounted on 1 in 2 copper pad of fr4 board
ut3416 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-325.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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